• Product Name:HTCC and LTCC substrate


    The current trend of miniaturization in the electronics and communication sectors is on the rise, creating demands for packaging solutions with increasingly complex requirements. Since possibilities for reducing the size of conventional glass-to-metal seals have been nearly exhausted, it has become necessary to develop new and innovative approaches. 

    Ceramic-to-metal sealing represents one such approach, and it has the potential for further development. In these seals, various types of electrical feedthroughs are embedded into a special ceramic material, offering totally new possibilities in the encapsulation of complex electronic and optoelectronic systems. 

    Co-fired ceramic devices are monolithic, ceramic microelectronic devices where the entire ceramic support structure and any conductive, resistive, and dielectric materials are fired in a kiln at the same time. Typical devices include capacitors, inductors, resistors, transformers, and hybrid circuits. The technology is also used for robust assembly and packaging of electronic components multi-layer packaging in the electronics industry, such as military electronics, MEMS, microprocessor and RF applications. 
    Due to a multilayer approach based on glass-ceramics sheets this technology offers the possibility to integrate into the LTCC body passive electrical components and conductor lines typically manufactured in thick film technology. This differs from semiconductor device fabrication where layers are processed serially and each new layer is fabricated on top of previous layers.
    Co-firing can be divided into low temperature (LTCC) and high temperature (HTCC) applications: low temperature means that the sintering temperature is below 1,000 °C (1,830 °F), while high temperature is around 1,600 °C (2,910 °F).[3] Compared to LTCC, HTCC has higher resistance conductive layers.

    Process line situation introduction
    The main technical specifications of the HTCC substrate are as follows:
    ● Standard thickness of each layer of ceramic: 0.15mm, 0.2mm, 0.25mm
    (cooked porcelain)
    ● The finest line and line spacing (thick film process): 100μm (cooked
    ● Minimum hole spacing: 3 times aperture (universal)
    ● Metallized through hole diameter (raw porcelain): 200μm (universal,
    cooked ceramics about 170μm);
    150μm (universal, cooked porcelain about 125μm);
    100μm (minimum, mature porcelain about 85μm);
    300 μm (maximum, mature porcelain about 250 μm).
    ● Maximum thickness of product: 5.0mm (cooked porcelain)
    ● Resistance of the wire: 15-18mΩ/□
    ● Metallized φ100μm through-hole column resistance: ≤30mΩ/mm;
    Metallized φ150μm through-hole column resistance: ≤20mΩ/mm;
    Metallized φ200μm through-hole column resistance: ≤15mΩ/mm;
    Metallized φ300μm Through-hole column resistance: ≤10mΩ/mm.
    Material system available
    Alumina ceramics:
    Al-Ca-Si-Mg (white porcelain, 94%-95%) AW01
    Al-Ca-Si-Mg-Ti-Cr-Mo (black porcelain, 93%-94%) AB01
    Al-Ca-Si-Mg-Cr-Mo (black porcelain, 93%-94%, requires split products)
    a. Acceptable design file format
    Dwg, dxf, PROE, PROTEL format
    b. Characteristic parameters
    White porcelain:
    ● Dielectric constant:
    ε r =9.1±0.2 @DC-18GHz
    ε r =9.3±0.2 @18-40GHz
    ● Dielectric loss:
    Tgδ<1.5×10 -3 @ DC-40GHz
    ● Insulation characteristics:
    Breakdown voltage: ≥8000V/mm
    Insulation resistance: ≥10 14 Ω·cm (20°C)
    ● Standard 50Ω with line:
    Insertion loss: ≤0.3dB/inch (X-band)
    Standing wave ratio: <1.2 (X band)
    ● Other material parameters:
    Flexural strength: 350MPa
    Yang Modulus: 304GPa
    Thermal conductivity: 17W/m•K
    Thermal expansion coefficient: 7-9ppm/°C (0-700°C)
    Porosity: ≤4.5% (SEM image method)
    Black porcelain:
    ● Dielectric constant:
    ε r =9.5±0.2 @DC-18GHz
    ε r =9.8±0.2 @18-40GHz
    ● Dielectric loss:
    Tgδ<5.5×10 -3 @DC-40GHz
    Flexural strength: 400MPa
    Yang Modulus: 304GPa
    Thermal conductivity: 17W/m•K
    Thermal expansion coefficient: 7-9ppm/°C (0-700°C)
    Porosity: ≤4.5% (SEM image method)
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    2. Line width and line spacing